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Reducing the critical switching current in the free layer of magnetic random access memory

Authors
Journal
Journal of Magnetism and Magnetic Materials
0304-8853
Publisher
Elsevier
Publication Date
Volume
304
Issue
1
Identifiers
DOI: 10.1016/j.jmmm.2006.02.022
Keywords
  • Micromagnetic Simulation
  • Toggle-Mode Switching
  • Synthetic Antiferromatic Bilayer
  • Mram
Disciplines
  • Physics

Abstract

Abstract The switching behavior of synthetic antiferromagnetic (SyAF) bilayers in a toggle magnetic random access memory is investigated by micromagnetism. The strength of exchange coupling between the two sublayers significantly modifies the switching behavior of SyAF bilayers. The critical switching current decreases with decreasing the exchange coupling, and the low critical switching current can be achieved for SyAF bilayers solely based on the magnetostatic coupling. In addition, the optimization of the end shape in free layers and the ratio of width to height of conducting lines can further reduce the critical switching current.

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