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Transient photoconductivity studies of the UV light soaked state of amorphous organic polysilanes

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-3093(05)80108-5
Keywords
  • Part I
  • Section 6. Metastable Defects

Abstract

Ultra-violet (UV) light-induced phenomena of transient hole transport in polymethylphenylsilane have been investigated with a time-of-flight technique. It is found that the electric field and the temperature dependence of the drift mobility is not affected significantly by UV irradiation, while the transit time dispersion remarkably increases. This UV light-induced change can be almost removed by room temperature annealing. It is concluded that the increased transit-time dispersion is caused by the reduction of the free hole lifetime, which is governed by the number of Si dangling bonds created by the UV irradiation.

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