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Terahertz emission fromδ-doped GaAs and GaAs/AlGaAs: A comparative Monte Carlo study

Authors
Journal
Optics Communications
0030-4018
Publisher
Elsevier
Publication Date
Volume
321
Identifiers
DOI: 10.1016/j.optcom.2014.01.035
Keywords
  • Terahertz Radiation
  • Monte Carlo Simulation
  • Semiconductor Structures

Abstract

Abstract Pulsed terahertz emission from the optically excited δ-doped GaAs and GaAs/AlGaAs structures is analyzed by ensemble Monte Carlo simulations. It is found that the amplitude of the transient photocurrent in the δ-doped GaAs structure is slightly lower than the amplitude of the transient photocurrent in the δ-doped GaAs/AlGaAs heterostructure. The evolution of the photoexcited electron–hole plasma on a long time scale after optical pulse is investigated. The results of the simulations show that the recovery rate of the δ-doped GaAs structure after optical pulse significantly exceeds the recovery rate of the δ-doped GaAs/AlGaAs heterostructure. The increased power of the terahertz emission from the δ-doped GaAs structure is expected due to the enhanced recovery rate.

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