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Photoinduced annihilation of σ bonds in amorphous poly(methylphenylsilane)

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(95)00784-9

Abstract

Abstract The photoinduced annihilation of σ bonds in poly(methylphenylsilane) (PMPS) films has been studied by prolonged exposure to 325 nm light at room temperature. The transparency of the film begins to increase significantly after an exposure time, t T. The decay profile of the absorption after t T confirms the presence of a thermally activated process in the photoscission of σ bonds. Photoluminescence measurements show a decay of the σ∗−σ emission and a slight increase in a peak at 530 nm (ascribable to the π∗−σ emission) before t T. The former is explained by the diffusion of photogenerated holes and the creation of nonradiative recombination centers by them. The latter is discussed by the accumulation of σ bonds which interact with phenyl-π electrons and have higher activation energy for the photoscission than the others.

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