Abstract Pure and Zn, Sb, Ni-doped CuInS2 films were prepared by chemical bath deposition method. Structural, morphological, optical, and photoelectrochemical properties of the as-grown films were investigated. X-ray diffraction analysis revealed that films consisted of the tetragonal CuInS2 phase. The energy band gaps and carrier densities of these samples were in the ranges of 1.48–1.54eV and 2.38×1018–9.38×1019, respectively. The maximum photocurrent density of samples with a potential of −1.0V vs. a Pt electrode was found to be −8.58mA/cm2 with the largest hydrogen production capability of 33.26μmol/cm2 under illumination using a 300W Xe lamp system.