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Interface-mediated suppression of radiation damage in GaN

Authors
Journal
Scripta Materialia
1359-6462
Publisher
Elsevier
Volume
67
Issue
2
Identifiers
DOI: 10.1016/j.scriptamat.2012.04.020
Keywords
  • Ion-Beam Process
  • Rutherford Backscattering Spectrometry/Channelling (Rbs)
  • Semiconductor Compounds
  • Surface-Interface Defects

Abstract

Interfaces are often sinks for radiation-generated defects and could either promote defect recombination or cause detrimental disorder accumulation. Here, we study (0001) GaN irradiated with 500keV Xe ions at room temperature. Results show that, when point defects are generated within ∼50nm from the surface, they experience efficient recombination without any measurable increase in the rate of surface amorphization. Our findings provide clear experimental evidence of efficient suppression of radiation damage by an interface in a non-metallic material.

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