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The initial stages of NiSi2epitaxy on clean Si(111), Si(100) and Si(110) surfaces

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
247
Issue
1
Identifiers
DOI: 10.1016/0039-6028(91)90192-u

Abstract

Abstract The initial stages of NiSi 2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces caused by Ni segregation to the surface from the bulk due to the decrease of its solubility in silicon when lowering the temperature were studied by SEM, LEED and AES. There are two possible states of Ni on silicon surfaces depending on the cooling rate. These are manifested in the structure of the silicon surfaces, the sizes of epitaxial islands and their density on the surface.

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