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Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
24
Issue
1
Identifiers
DOI: 10.1016/0038-1101(81)90211-2

Abstract

Abstract Heavily-boron-doped polycrystalline Si films were deposited at 600°C on thermally grown SiO 2 by the thermal decomposition of SiH 4-BCl 3-H 2 mixture. Resistivity changes with isochronal or sequential annealing were systematically examined. Temperature dependence of equilibrium saturation carrier concentration was determined at 800 ∼ 1100°C. Since as-deposited polycrystalline Si is in the super-saturated state, carrier concentration decreases from the super-saturated to equilibrium saturation value by annealings over 700°C for poly Si doped with over 2 × 10 20 cm −3 resulting in anomalous resistivity change. Carrier concentration changes reversibly between saturation values with sequential annealing and is determined by the last annealing temperature when the annealing time is long enough. Mobility increases with annealing temperature, however, less increase is found for heavily doped poly Si, which is attributed to the suppression of grain growth caused by electrically inactive Si-B compounds.

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