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Green photoemission of a-Ga2S3crystals

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
81
Issue
4
Identifiers
DOI: 10.1016/0038-1098(92)90814-p
Disciplines
  • Physics

Abstract

Abstract A characteristics green-emission at 520 nm-wavelength has been observed in photoluminescence of Ga 2S 3 crystals prepared by the iodine-transport CVD method. From the results of thermoluminescence, infrared absorption and photoexcitation measurements, the origin of the green-emission band has been identified to be an acceptor-like center located at 0.4 eV above the top of the valence band. The centers should be due to Ga-vacancies that are produced in crystal growth, which can trap one electron per vacancy.

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