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Study of secondary electron emission from various targets due to 100 MeV Si7+beam

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
48
Issue
12
Identifiers
DOI: 10.1016/s0042-207x(97)00118-8

Abstract

Abstract The total secondary electron yields Y were measured for 100 MeV Si 7+ ions on Be, Al, Si, Ni, Ag and Au as a function of the incident angle of projectile ranging from 0 ° to 65 °. In order to compare the angular dependence of the electron yield for Si 7+ ions using different targets, the experimental curves were fitted by the empirical relation of the form Y( θ) = Y(0)( cosθ) − f , where θ is the angle of incidence, Y(0) is the yield at normal Incidence ( θ = 0 °) and f is a fitting parameter. The value of f varied from 0.69 to 1.52. The Z dependence of Y(0) for various targets ( Z = 4 to 79) were also observed.

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