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Optical properties of stepped InxGa1− xAs/GaAs quantum wells

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0167-9317(98)00172-5
Keywords
  • Excitons
  • Polaritons
  • Strained Iii-V Semiconductors
Disciplines
  • Physics

Abstract

Abstract A systematic study of In x Ga 1− x As/In y Ga 1− y As/GaAs(001) stepped quantum wells with indium composition x=14.9% and y=6.4% and thicknesses in the range of quasi-two-dimensional behaviour of Wannier excitons is performed. Optical spectra are compared with model calculations obtained by an accurate exciton envelope function. We point out that optical spectroscopy is a tool for studying indium diffusion in stepped wells, and this property is crucial in order to obtain second harmonic generation enhanced with respect to the bulk value.

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