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Role of ion bombardment and plasma impedance on the performances presented by undoped a-Si:H films

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
383
Identifiers
DOI: 10.1016/s0040-6090(00)01597-2
Keywords
  • A-Si:H
  • Plasma Enhanced Chemical Vapour Deposition (Pecvd)
  • Plasma
Disciplines
  • Chemistry

Abstract

Abstract The aim of this paper was to present results of the role of the d.c. grid bias on the silane plasma impedance and its I–V characteristics to grow undoped amorphous silicon (a-Si:H) films by plasma enhanced chemical vapour deposition (PECVD) in conditions where some nanoparticles can be formed in the growth region of the deposition process, under proper ion bombardment. The results achieved show that the performances of the films produced are dependent on the self bias voltage that can present photosensitivities of approximately 107 (two orders of magnitude larger than the one exhibited by films grown under conventional conditions) with density of states determined by the constant photocurrent method below 4×1015 cm−3. Apart from that, the films grown are less affected by light soaking than the conventional films.

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