Affordable Access

Publisher Website

Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
49
Issue
8
Identifiers
DOI: 10.1016/j.sse.2005.06.016
Keywords
  • Noise
  • Characterization
  • Hbt
  • Cross-Spectrum

Abstract

Abstract The present paper focuses on solutions of the experimental difficulties rising up when a full low frequency noise characterization of bipolar transistors exhibiting high noise levels and low input dynamic input impedances is carried out using a direct characterization technique. First, a typical direct characterization experimental set-up is introduced pointing out the difficulties to be faced when a high noise, low input impedance transistor is addressed. Then, an improved version of the experimental set-up is proposed and successfully applied to AlGaAs/GaAs heterojunction bipolar transistors.

There are no comments yet on this publication. Be the first to share your thoughts.