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New lines observed in photoluminescence from GaAs grown by MOCVD

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-2313(97)00069-0
Keywords
  • Section 15. Point Centers And Defects In Crystals

Abstract

Abstract The photoluminescence (PL) spectra of MOCVD-grown GaAs samples have been measured at 10 K, and for the most representative sample, PL spectra were recorded from 10 to 150K. Besides of the well-established transitions, a hitherto unreported peak was seen at 1.454 eV. The identification of a line at 1.408 eV is also discussed.

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