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Annealing effect of SnO2films prepared by chemical vapor deposition: Evidence of chlorine removal by auger electron spectroscopy and rutherford back-scattering spectrometry studies

Authors
Journal
Solar Cells
0379-6787
Publisher
Elsevier
Publication Date
Volume
13
Issue
3
Identifiers
DOI: 10.1016/0379-6787(85)90023-7
Disciplines
  • Chemistry

Abstract

Abstract Using a rather simple chemical vapor deposition apparatus, transparent conducting tin oxide films were fabricated through the decomposition of SnCl 4·5H 2O. The films showed good electrical properties but high chlorine contamination. We have found that the chlorine can be removed by annealing at 500 K in a hydrogen ambient. This has been established by Auger electron spectroscopy and Rutherford backscattering spectrometry.

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