Abstract An n-channel MOS transistor was fabricated on a laser recrystallized polycrystalline silicon film at temperatures below 630°C. The gate oxide was sputter deposited at 200°C. Lasers were used for substrate recrystallization, implantation damage annealing and dopant drive-in. An electron field effect mobility higher than 100 cm 2/V · sec. was observed on the finished transistors. With 10 V applied to the gate of the transistors for 2 hr, less than a 20 mV shift in threshold voltage was observed.