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Low temperature processed mosfet's using laser recrystallized polycrystalline silicon films

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
26
Issue
11
Identifiers
DOI: 10.1016/0038-1101(83)90012-6

Abstract

Abstract An n-channel MOS transistor was fabricated on a laser recrystallized polycrystalline silicon film at temperatures below 630°C. The gate oxide was sputter deposited at 200°C. Lasers were used for substrate recrystallization, implantation damage annealing and dopant drive-in. An electron field effect mobility higher than 100 cm 2/V · sec. was observed on the finished transistors. With 10 V applied to the gate of the transistors for 2 hr, less than a 20 mV shift in threshold voltage was observed.

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