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An analytical model for SiC MESFETs

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
46
Issue
10
Identifiers
DOI: 10.1016/s0038-1101(02)00094-1
Disciplines
  • Design

Abstract

Abstract An improved, physics-based analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current–voltage characteristics of the device and expressions for the transconductance, output conductance and capacitances for a small signal model.

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