Affordable Access

Publisher Website

Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
354
Identifiers
DOI: 10.1016/j.jnoncrysol.2007.09.085
Keywords
  • Heterojunctions
  • Photovoltaics
  • Conductivity
  • Plasma Deposition
  • Nanocrystals
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract n-Type hydrogenated nanocrystalline cubic silicon carbide (nc-3C–SiC:H) films have been deposited by very high-frequency plasma-enhanced chemical vapor deposition at a low substrate temperature of about 360 °C to apply this material to the window layer of heterojunction crystalline silicon (HJ-c-Si) solar cells. We investigated the effect of in situ doping on deposition rate, crystalline volume fraction and dark conductivity to optimize properties of the material. We also fabricated HJ-c-Si solar cells with a n-type nc-3C–SiC:H window layer. The solar cells shows high internal quantum efficiency of 0.90 at a wavelength of 400 nm, indicating that n-type nc-3C–SiC:H deposited by VHF-PECVD is a promising candidate of the window layer of HJ-c-Si solar cells.

There are no comments yet on this publication. Be the first to share your thoughts.