Abstract Polycrystalline thin films of γ-In 2Se 3 were obtained by sequentially evaporating In and Se on glass substrates followed by an annealing in flowing argon. The obtained films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and microprobe analysis and optical and photoconductive measurements were also made. The effects were studied of the deposition atomic ratio (R = [Se] [In] ) , the annealing temperature and duration on the film structure and properties. It was found that whatever the deposition conditions, the resultant films were homogeneous, stoichiometric and monophased. Textured films were obtained when the deposition atomic ratio R was 3 2 with annealing at 673 K for 30 min.