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γ-In2Se3thin films obtained by annealing sequentially evaporated In and Se layers in flowing argon

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
48
Issue
10
Identifiers
DOI: 10.1016/s0042-207x(97)00094-8

Abstract

Abstract Polycrystalline thin films of γ-In 2Se 3 were obtained by sequentially evaporating In and Se on glass substrates followed by an annealing in flowing argon. The obtained films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and microprobe analysis and optical and photoconductive measurements were also made. The effects were studied of the deposition atomic ratio (R = [Se] [In] ) , the annealing temperature and duration on the film structure and properties. It was found that whatever the deposition conditions, the resultant films were homogeneous, stoichiometric and monophased. Textured films were obtained when the deposition atomic ratio R was 3 2 with annealing at 673 K for 30 min.

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