Affordable Access

Publisher Website

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
299
Issue
1
Identifiers
DOI: 10.1016/s0375-9601(02)00619-9

Abstract

Abstract The thermal stability of cubic-phase GaN (c-GaN) film grown by molecular-beam epitaxy was investigated by Raman scattering spectroscopy and X-ray scattering. The results of Raman scattering shows that, after annealing at 1000°C, the intensity of transverse (TO) and longitudinal (LO) optical peaks from cubic phase obviously decreases while the intensity of TO b peak from the boundary effect slightly decreases, but the transformation of the hexagonal phase ( α-GaN) can not be detected due to a little of α-GaN inclusion. X-ray reflectivity measurements indicate that there is a high-electron-density layer between the substrate and the GaN film, and it becomes uniform and much thinner after high-temperature annealing, counting for the Raman results of the intensity change of the TO b peak. The results of high-angle X-ray diffraction and X-ray reciprocal space mapping revealed that the relative content of α-GaN obviously increases after annealing at 1000°C, and ( 10 1 ̄ 1) is the most stable diffraction lattice of the α-GaN hexagonal phase.

There are no comments yet on this publication. Be the first to share your thoughts.