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Single-crystalline 4H-SiC micro cantilevers with a high quality factor

Authors
Journal
Sensors and Actuators A Physical
0924-4247
Publisher
Elsevier
Publication Date
Volume
197
Identifiers
DOI: 10.1016/j.sna.2013.04.014
Keywords
  • Mems
  • Single-Crystalline 4H-Sic
  • Cantilever
  • Quality Factor
  • Resonator
Disciplines
  • Chemistry

Abstract

Abstract Single-crystalline 4H-SiC micro cantilevers were fabricated by doping-type selective electrochemical etching of 4H-SiC. Using this method, n-type 4H-SiC cantilevers were fabricated on a p-type 4H-SiC substrate, and resonance characteristics of the fabricated 4H-SiC cantilevers were investigated under a vacuum condition. The resonant frequencies agreed very well with the results of numerical simulations. The maximum quality factor in first-mode resonance of the 4H-SiC cantilevers was 230,000. This is 10 times higher than the quality factor of conventional 3C-SiC cantilevers fabricated on an Si substrate.

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