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Plasmonic Au nanoparticles for enhanced broadband light absorption in inverted organic photovoltaic devices by plasma assisted physical vapour deposition

Organic Electronics
DOI: 10.1016/j.orgel.2012.11.027
  • Plasmon
  • Broadband Light Absorption
  • P3Ht
  • Organic Photovoltaic
  • Plasma Assisted Physical Vapour Deposition


Abstract We use a low vacuum plasma assisted physical vapour deposition (PAPVD) method to deposit a Au nanoparticles (NPs) thin film onto the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer in inverted poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methylester (P3HT:PCBM) organic photovoltaic (OPV) devices. The Au NPs that incorporated into the PEDOT:PSS layer and reached to the active P3HT:PCBM layer can provide significant plasmonic broadband light absorption enhancement to the active layer. An approximately 50–90% improvement in short-circuit current density and in power convention efficiency has been achieved compared with those OPV devices without the plasmonic light absorption enhancement. This technique can be adopted and easily fit into most OPV device fabrication processes without changing other layers’ processing methods, morphologies, and properties.

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