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The effects of thermal annealing on the obliquely deposited Ag–Ge–S thin films

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
70
Issue
6
Identifiers
DOI: 10.1016/j.jpcs.2009.05.011
Keywords
  • A. Chalcogenides
  • A. Amorphous Materials
  • B. Vapor Deposition
  • C. Raman Spectroscopy

Abstract

Abstract Obliquely deposited thin films of ternary Ag–Ge–S glasses are characterized in this work. Thin films are fabricated in a vacuum thermal evaporator at different evaporation angles and examined by Raman spectroscopy. The Raman mode frequency of GeS 4 corner-sharing (CS) structure of the as-deposited films display a red-shift as a function of Ag content due to reduced global connectivity, and therefore decreased network stress. Film thickness of normally deposited thin films is significantly less when compared against obliquely deposited ones. Sulfur-ring (S 8) modes are observed in thin films but not in corresponding bulk material. Thermal annealing of thin films results in the disappearance of Sulfur-ring (S 8) modes, while the temperature required for this phenomenon is deposition angle dependent. Thickness of the obliquely deposited films shrinks significantly after thermal annealing, which indicates a collapse of the micro-column structure introduced by oblique deposition.

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