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RESURF LDMOSFET with a trench for SOI power integrated circuits

Authors
Journal
Microelectronics Journal
0026-2692
Publisher
Elsevier
Publication Date
Volume
35
Issue
5
Identifiers
DOI: 10.1016/j.mejo.2004.02.001
Keywords
  • Resurf Ldmosfet
  • Trench
  • Silicon-On-Insulator

Abstract

Abstract A new structure of RESURF LDMOSFET is proposed, based on silicon-on-insulator, to improve the characteristics of the breakdown voltage and the specific on-resistance, where a trench is applied under the gate in the drift region. A trench is used to reduce the electric field under the gate when the concentration of the drift region is high, thereby increasing the breakdown voltage and reducing the specific on-resistance. Detailed numerical simulations demonstrate the characteristics of this device and indicate an enhancement on the performance of the breakdown voltage and the specific on-resistance in comparison with an optimal conventional device with LOCOS under the gate.

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