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ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's

Authors
Publisher
Elsevier Ltd
Publication Date
Volume
36
Identifiers
DOI: 10.1016/0026-2714(96)00184-9
Keywords
  • Theme 1—Failure Mechanisms And Modelling Esd Testing And Characterization

Abstract

Abstract This paper reports an ESD internal gate-oxide damage occurred on the digital-analog interface of a mixed-mode CMOS IC. A new ESD protection method is proposed to rescue this internal gate-oxide damage by adding ESD-protection devices on the long metal line between digital-analog interfaces. Experimental verification has confirmed that the IC product can be rescued to pass 2-KV ESD stress from the digital/analog VDD to digital/analog VSS pads without causing any internal damage again.

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