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Motional narrowing effects of F and H NMR in fluorinated and hydrogenated amorphous silicon

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
42
Issue
4
Identifiers
DOI: 10.1016/0038-1098(82)90539-7

Abstract

Abstract NMR measurements have been performed on F and H in a-Si:F, a-Si: (F,H) and a-Si:H films at various temperatures. NMR spectra of F in glow-discharge-deposited a-Si: (F,H) and those of H in sputtered a-Si:H exhibit a narrowing effect with increasing measurement temperature. In particular, the narrowing effect is very prominent for F NMR in a-Si:(F,H) films annealed at 600°C; from a broad Gaussian line at 4.2 K to a narrow Lorentzian line at room temperature. The results are explained by the motional narrowing effect which is caused by movable groups of F or H in the form of SiF 4, (SiF 2) n or (SiH 2) n in the amorphous structure.

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