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Hopping conductivity in amorphous silicon nitride in high electric and magnetic fields

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
61
Issue
9
Identifiers
DOI: 10.1016/0038-1098(87)90157-8

Abstract

Abstract Non-Ohmic silicon nitride conductivity has been investigated over a wide range of temperature 2–450 K, in high electric fields E>3 MV/cm and magnetic fields up to 70 kG. Unusual behaviour of the hopping conductivity and a strong positive magnetoresistance at T<30 K have been found.

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