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Negative resistance and peak velocity in the central (000) valley of III–V semiconductors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
22
Issue
5
Identifiers
DOI: 10.1016/0038-1101(79)90154-0

Abstract

Abstract The negative resistance in III–V materials such as GaAs at large electric fields is generally recognized as arising from the transfer of electrons from the central (000) valley to higher lying minima in the conduction band. Monte Carlo transport studies show that the negative resistance effect is still present in III–V materials when the valley spacing is increased to large values (> 0.5 eV) and even present when the higher minima are eliminated entirely from the calculations. This negative resistance arises from basic transport properties of the central valley. Studies are presented of the basic negative resistance effect in the central valley of III–V materials as well as studies of Al 1− x In x As ( x ∼ 0.75) and Ga 1− x In x As ( x ∼ 0.6) which are two specific materials where the negative resistance effect is due predominantly to the central valley.

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