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Variable range hopping conductivity in hydrogenated amorphous silicon thin film transistors

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
72
Issue
1
Identifiers
DOI: 10.1016/0038-1098(89)90879-x

Abstract

Abstract Electron conduction in the accumulation layer of hydrogenated amorphous silicon (a-Si:H) thin film transistors shows a transition from activated band conduction to variable-range hopping, for temperatures below approximately 240°K. The observed T − 1 3 temperature dependence suggests that the hopping takes place in a two-dimensional (2-D) layer close to the a-Si:H/gate dielectric interface. This is consistent with the calculated conducting channel thickness of 8.5 Å to 60 Å, for the range of gate voltages used. The present results are also consistent with previously reported 2-D variable range hopping conductivity in thin amorphous semiconductors.

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