808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice
- Authors
-
- zhu, dh
- wang, zg
- liang, jb
- xu, b
- zhu, zp
- zhang, j
- gong, q
- sy, li
- chinese, dh r zhu
- Publication Date
- Jan 01, 1997
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- 半导体材料
- High-Power
- Semiconductor Laser
- Mbe
- Quantum Well
- Molecular-Beam Epitaxy
- Quantum-Well Lasers
- Beryllium
- Diodes
- Migration
- Operation
- Mirrors
- Migration, Internal
- Atomic Layer Deposition
- Diodes
- Quantum Well
- Operation
- Optical Instruments
- Semiconductor Laser
- Atomic Layer Deposition
- Quantum Cascade Lasers
- Motion
- Beryllium
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- 半导体激光器
- Electron Mirrors
- Micro-Photonics
- Microphotonics
- Microoptics
- Micro-Optical Components
- Micro-Optics
- Digital Micromirror Devices
- Micromirrors
- Dbr
- Distributed Bragg Reflectors
- Chromatic Aberration (Optics)
- Achromatism
- Aberration, Chromatic And Spherical
- Looking-Glasses
- Photographic Lenses
- Equipment, Optical
- Telescopes
- Mirrors
- Lenses
- Optical Design Techniques
- Optical Collimators
- Optical Equipment
- Optics--Instruments
- 运算
- Moving
- Movements
- Movement
- 运动
- Population Migration
- International Migration
- 迁移
- Mobilite
- Mobilitaet
- Migration
- Beweglichkeit
- Mobility
- Internal Migration
- 迁移率
- P-I-N Diodes
- Diodes (Francais)
- Dioden
- Beryllium (Francais)
- Beryllium (Deutsch)
- Be
- Glucinum
- Glucinium
- Soa
- Semiconductor Optical Amplifiers
- Semiconductor Quantum Well Lasers
- Quantum Wire Lasers
- Multiple Quantum Well Lasers
- Mqw Lasers
- Quantum Well Lasers
- Quantum Dot Lasers
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Molecular Beam Epitaxial Growth
- Omvpe
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Omcvd
- Gsmbe
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Molecular Beam Epitaxial Growth
- Omvpe
- Omcvd
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- License
- Unknown
- External links
Abstract
808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.
