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Absolute absorption coefficients ofZnTesingle crystal layers: Experiment and theory

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
101
Identifiers
DOI: 10.1016/0022-0248(90)91066-y

Abstract

Abstract Absolute values of the absorption coefficient of MOCVD grown ZnTe single crystal layers have been determined from transmission measurements. The transmission data in the spectral range from 1.4 to 3.1 eV have been taken from several samples with thickness between 0.48 and 2.12 μm at temperatures from 15 to 300 K. The temperature dependence of the excitonic band edge is used to present a new parameter set for the Varshni formula. Quantitative calculations of the absorption coefficient above the band gap have been performed using single particle energies and dipole matrixelements obtained from a 14×14 k·p Hamiltonian and including the Sommerfeld correction due to the electron-hole correlation for the interband continuum. The theoretical results are in satisfactory agreement with the experimental data.

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