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Fermi-edge singularities in InGaAs and GaAs quantum wires

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
305
Identifiers
DOI: 10.1016/0039-6028(94)90957-1
Disciplines
  • Physics

Abstract

Abstract Strong Fermi-edge singularities (FES) were observed in the magnetoluminescencc spectra of' InGaAs quantum wires of electronic widths of L ww ≈ 500 Å. These quasi-l-dimensional (1D) many-electron/ one-hole correlation effects cause a large shift in spectral weight from the band-edge to the conduction Fermi energy, when compared with unpatterned (2D) structures. While the FES effects in the InGaAs quantum wires arc associated with spatially direct transitions, we have also observed related effects in GaAs, where a Schottky gate bias is needed to induce the effect due to the dominantly spatially indirect nature of the transitions.

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