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Broadband near-field effects for improved thin film Si solar cells on randomly textured substrates

Authors
Journal
Solar Energy Materials and Solar Cells
0927-0248
Publisher
Elsevier
Volume
112
Identifiers
DOI: 10.1016/j.solmat.2013.01.023
Keywords
  • Thin Film Solar Cells
  • A-Si:H/μC-Si:H Tandem Cells
  • Silicon Oxide N-Layer
  • Back-Reflector
  • Near-Field Effects
Disciplines
  • Design
  • Physics

Abstract

Abstract We show the superior performance in terms of light management of n-doped mixed phase silicon oxide in direct contact with Ag with respect to the established ZnO/Ag back reflector in thin film Si tandem solar cells on randomly textured substrates. Based on coexisting larger quantum efficiency and amplification of the optical Raman mode of Si, we propose that, in spite of a simple cell design, near-field concentrated light radiated at metal nanoprotrusions on the back interface is harvested. The effect is a remarkable 10% increase of the generated current density in the bottom cell, holding promise for significant conversion efficiency gain in matched devices.

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