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Giant low bias negative differential resistance induced by nitrogen doping in graphene nanoribbon

Authors
Journal
Chemical Physics Letters
0009-2614
Publisher
Elsevier
Publication Date
Volume
554
Identifiers
DOI: 10.1016/j.cplett.2012.10.045

Abstract

Graphical abstract We present a systematic study of the electronic transport properties of armchair graphene nanoribbon devices with periodic nitrogen-doping. Giant negative differential resistance behaviors with peak-to-valley ratio up to the order of 105 can be obtained in the mV bias regime by tuning the position and the concentration of the dopants. Highlights ► Electronic transport properties of armchair graphene nanoribbon devices with periodic nitrogen-doping are studied. ► Transport properties are strongly dependent on the position and the concentration of the dopants. ► Giant NDR behaviors with peak-to-valley up to the order of 105 can be obtained in the mV bias regime.

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