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High-mobility InSb thin films on GaAs (0 0 1) substrate grown by the two-step growth process

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/j.jcrysgro.2004.03.033
Keywords
  • A1. Mobility
  • A1. Two-Step Growth
  • A3. Molecular Beam Epitaxy
  • B2. Semiconducting Iii–V Materials
  • B3. Infrared Devices

Abstract

Abstract InSb heteroepitaxial thin films were grown on GaAs (0 0 1) substrate by the temperature variation two-step growth process. X-ray rocking curve widths and electrical properties of the InSb films with different thickness were investigated. The best value of a 2-μm thick InSb film had an X-ray rocking curve width of 277 arcsec and room-temperature Hall mobilities, the carrier concentrations obtained were 55,000 cm 2/V s and 1.5×10 16/cm 3, respectively. The enhanced mobilities and reduced carrier concentration of InSb films suggested a low defect density due to confinement of the dislocation in the InSb/GaAs interface.

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