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Modification of the shapes of GaAs/AlGaAs quantum wells using rapid thermal annealing

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
5
Issue
3
Identifiers
DOI: 10.1016/0749-6036(89)90308-x
Disciplines
  • Physics

Abstract

Abstract The effect of rapid thermal annealing (RTA) on the shapes of single and coupled double GaAs/AlGaAs quantum wells has been investigated by measuring exciton energies using low temperature photoluminescence and photoluminescence excitation spectroscopies. After RTA, large changes in exciton energies were observed only if the sample was capped with a thin layer of silicon dioxide. For single quantum wells there was an increase in exciton energy whose magnitude depended on the width of the well and its distance from the surface of the wafer. For coupled quantum wells, the exciton energy decreased and there was clear evidence, in the excitation spectrum, of asymmetry in the heterostructure after RTA.

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