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Growth of higher manganese silicides from amorphous manganese–silicon layers synthesized by ion implantation

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
272
Identifiers
DOI: 10.1016/j.nimb.2011.01.120
Keywords
  • Silicides
  • Amorphous
  • Transmission Electron Microscopy

Abstract

Abstract Atomistic structures of high-fluence Mn ion implanted Si were examined using transmission electron microscopy (TEM). Si(0 0 1) single crystals were irradiated at cryogenic temperature with 120 keV Mn ions to a fluence of 3.0 × 10 17/cm 2. Cross-sectional TEM observations revealed that an amorphous bilayer consisting of amorphous Mn–Si and amorphous Si is formed on the topmost layer of the Si substrate. Atomic pair-distribution functions extracted from electron diffraction patterns indicated that short-range order of the amorphous Mn–Si thin layer is similar to the local atomic configuration of higher manganese silicides. The amorphous Mn–Si layer crystallized to Mn 4Si 7 polycrystalline layer by thermal annealing.

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