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Mapping the conduction band structure of GaAs along the ΓΔX direction

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
89
Issue
2
Identifiers
DOI: 10.1016/0038-1098(94)90386-7

Abstract

Abstract Using angle-resolved photoemission data, the conduction band structure of GaAs along the ΓΔX directions has been determined. The determination of values of k for the observed transitions was based on theoretical valence bands of GaAs from a linear Muffin Tin Orbital (LMTO) calculation. The experimentally determined final states are in reasonable good agreement with the LMTO conduction bands.

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