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A novel switching phenomenon in quenched NbSe3

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
70
Issue
9
Identifiers
DOI: 10.1016/0038-1098(89)90283-4

Abstract

Abstract We have induced switching in nominally pure crystals of NbSe 3 by heating and quenching. The quenched switching samples display a number of novel characteristics including switching at temperatures up to 57K, a linear dependence of the threshold field on temperature, large statistical fluctuations of the threshold fields and long switching times on the order of a few ms. We propose that the quenched samples contain a large concentration of lattice defects, that these defects act as “ultrastrong pinning centers”, and that the unusual aspects of switching in quenched samples are due to an unusually large concentration of these centers.

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