Affordable Access

Publisher Website

Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
271
Issue
3
Identifiers
DOI: 10.1016/s0375-9601(00)00347-9
Keywords
  • Algaas/Gaas Quantum Well
  • Intermixing
  • Ion Implantation
  • Photoluminescence
  • Photoreflectance
Disciplines
  • Physics

Abstract

Abstract The effects of intermixing Al 0.54Ga 0.46As/GaAs/Al 0.54Ga 0.46As quantum well (QW) enhanced by arsenic ion implantation and subsequent annealing have been investigated by photoluminescence and photo-modulated reflectance measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H 22 transition was found to be much less sensitive to the implantation doses than that of H 11. The experimental results are different from the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful for understanding the potential profile after intermixing enhanced by arsenic ion implantation, and also for the application of implantation enhanced intermixing effects on devices, such as QW lasers and photodetectors, opto-nonlinear devices, etc..

There are no comments yet on this publication. Be the first to share your thoughts.