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Depletion layer formation, space-charge injection and current-voltage characteristics for the siliconp-n-p(n-p-n) structure

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
15
Issue
4
Identifiers
DOI: 10.1016/0038-1101(72)90108-6
Disciplines
  • Communication

Abstract

Abstract Depletion layer formation and current-voltage characteristics are described for the general semiconductor p- n- p ( n- p- n) structure in which the impurity or defect centre is able to communicate with both sets of transport levels. All possibilities for current lie within the region bounded on one side by the essentially vertical Shockley-Prim punch-through characteristic and on the other side by the square-law Mott-Gurney space-charge-limited characteristic. If the impurity levels lie near the mid-gap position a variety of characteristics within this region can be expected. Representative current-voltage characteristics have been computed and are described for a typical silicon structure.

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