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Nanolithography on SrRuO3thin film surfaces by scanning tunneling microscopy

Authors
Journal
Physica B Condensed Matter
0921-4526
Publisher
Elsevier
Publication Date
Volume
405
Issue
7
Identifiers
DOI: 10.1016/j.physb.2010.01.068
Keywords
  • Nanolithography
  • Scanning Tunneling Microscope
  • Srruo3
  • Prolate-Spheroidal Coordinate

Abstract

Abstract Nanolithography on SrRuO 3 (SRO) thin film surfaces has been performed by a scanning tunneling microscope under ambient conditions. The depth of etched lines increases with increasing bias voltage but it does not change significantly by increasing the tunneling current. The dependence of line-width on bias voltage from experimental data is in agreement with theoretical calculation based on field-induced evaporation mechanism. Moreover, a three-square nanostructure was successfully created, showing the capability of fabricating nanodevices in SRO thin films.

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