Affordable Access

Publisher Website

High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
268
Identifiers
DOI: 10.1016/j.jcrysgro.2004.04.100
Keywords
  • A1. Low Dimensional Structures
  • A3. Molecular Beam Epitaxy
  • B2. Semiconducting Iii–V Materials

Abstract

Abstract In this article, using an in situ micro-structured buffer, we report the growth of high-quality InAs epilayer on GaAs substrate by molecular beam epitaxy. Structural characterization of such InAs epilayer was carried out using cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and depth-resolved channeling contrast microscopy (CCM). TEM and CCM images clearly show that the dislocations are trapped in the thin buffer layer between the InAs epilayer and the GaAs substrate interface. A narrow XRD peak from the InAs epilayer grown by this technique indicates good crystalline quality. In addition, the XRD peak position and the optical phonon peaks obtained from micro-Raman measurements confirm that the strain has been released in the InAs epilayer.

There are no comments yet on this publication. Be the first to share your thoughts.