Abstract Pulsed electron deposition (PED), an ablation-based film growth technique similar to pulsed-laser deposition, is a relatively new method for the physical vapor deposition (PVD) of films. In the area of PVD ex situ superconductor precursor deposition, PED is potentially simpler and more versatile than its traditional e-beam co-evaporation counterpart. We have deposited near-stoichiometric YF 3–BaF 2–CuO PED precursors of various thicknesses in moving configuration on RABiTS substrates. Critical current densities ( J c) as high as 1.6 MA/cm 2 have been achieved on these precursors converted at standard slow rates of roughly 1 Å/s, which has previously been necessary for high performance PVD precursors. More importantly, these as-deposited PED precursors were found to be able to tolerate aggressive conversion conditions. Consequently, simultaneous attainment of high conversion rate of nearly 8 Å/s and high J c of 1 MA/cm 2 has been realized.