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Small-signal field-effect kinetics in silicon

Authors
Publisher
Elsevier B.V.
Publication Date
Volume
6
Issue
4
Identifiers
DOI: 10.1016/0039-6028(67)90102-1

Abstract

Abstract The temperature dependence of small signal a.c. field-effect in silicon was studied in the temperature interval 170–300 °K. The possibilities of application of the frequency phase method in the field-effect are analysed. The experimental results are interpreted by the theory taking into account majority carriers and one energy level. The evaluation of surface potential and surface state parameters agrees with the results on the etched Si surface obtained by the large-signal field-effect method.

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