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Interfacial elastic strains in (Al, Ga)As/GaAs heterostructures grown by liquid phase epitaxy

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
44
Issue
1
Identifiers
DOI: 10.1016/0022-0248(78)90323-8

Abstract

Abstract Double crystal X-ray diffraction topography has been used to analyze localized strains in (Al, Ga)As/GaAs epilayer structures. The strains are caused by a combination of the lattice misfit stress and an unevenness of a given interface. The three major origins of the strains are found to be terracing and meniscus lines in the layer interfaces and pit formation at the substrate surface.

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