Affordable Access

Publisher Website

Kinetics of growth of thin anodic oxides of silicon at constant voltages

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
50
Issue
7
Identifiers
DOI: 10.1016/0022-3697(89)90005-x
Keywords
  • Anodic Oxidation
  • Silicon
  • Growth Kinetics
  • Ionic Current Efficiency
  • Oxygen Evolution

Abstract

Abstract Constant voltage anodization of silicon was carried out to grow thin silicon oxide layers on silicon. Four different forming solutions, i.e. ethylene glycol + 0.04(N) HNO 3, KNO 3, NH 4NO 3 and Ba(NO 3) 2 were used. Oxidation proceeds at the rate of 6 Å V −. The current decay consisted of one sharply and another slowly decaying exponential. Initially, growth is linear with time when the rate of growth of the oxide is maximum. This is followed by drastic deviation from linearity towards saturation. The ionic current efficiency is highest for the forming solution containing NH 4NO 3 and the best value for this solution is 0.88% at 80 V. The refractive index of these oxides was found to be 1.46. The oxygen evolution at the anode during oxidation and the current caused by this evolution were studied using gas chromatography. The electronic properties, viz. mobile charge, fixed charge and interface states density of these oxides were measured by capacitance-voltage techniques and the best values were obtained for the solution containing 0.04(N) NH 4NO 3.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Anodic oxides on silicon

on Electrochimica Acta Jan 01, 1992

Silicon anodic oxides grown in the oscillatory ano...

on Solid-State Electronics Jan 01, 2001
More articles like this..