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Physical properties of CVD boron-doped multiwalled carbon nanotubes

Authors
Journal
Materials Chemistry and Physics
0254-0584
Publisher
Elsevier
Publication Date
Volume
111
Identifiers
DOI: 10.1016/j.matchemphys.2008.04.034
Keywords
  • Boron Doping
  • Carbon Microspheres
  • Tem
  • Esr
  • Raman Spectroscopy
  • Electrical Conductivity

Abstract

Abstract The effects of boron doping and electron correlation on the transport properties of CVD boron-doped multiwalled carbon nanotubes are reported. The boron-doped multiwalled carbon nanotubes were characterized by TEM as well as Raman spectroscopy using different laser excitations (viz. 488, 514.5 and 647 nm). The intensity of the D-band laser excitation line increased after the boron incorporation into the carbon nanotubes. The G-band width increased on increasing the boron concentration, indicating the decrease of graphitization with increasing boron concentration. Electrical conductivity of the undoped and boron-doped carbon nanotubes reveal a 3-dimensional variable-range-hopping conductivity over a wide range of temperature, viz. from room temperature down to 2 K. The electrical conductivity is not found to be changed significantly by the present levels of B-doping. Electron Paramagnetic Resonance (EPR) results for the highest B-doped samples showed similarities with previously reported EPR literature measurements, but the low concentration sample gives a very broad ESR resonance line.

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