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Temperature dependence of mobility in silicon (100) inversion layers at low temperatures

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
113
Identifiers
DOI: 10.1016/0039-6028(82)90588-x

Abstract

Abstract Electron mobility of Si(100) n-inversion layers in MOSFETs having μ peak (4.2 K) 4000, 6500 and 12000 cm 2/V·s has been measured at temperatures between 1 and 80 K The carrier concentration dependence of the mobility extrapolated to T−0 and the temperature dependent part of the scattering probability are investigated.

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