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Luminescence and microstructure of Ga, In and Tl centres in laboratory-doped natural feldspars

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-2313(96)00264-5
Keywords
  • Section 15. Point Centers And Defects In Crystals

Abstract

Abstract The doping of feldspars by Ga, In and Tl leads to the appearance of intense specific emission bands. Their spectra and decay kinetics were measured at 4–290 K in 2–8 eV spectral range. The lowest excited state of the impurity centre proves to be related to the excited 3P state of corresponding ns 2 ion. This is the reason for the long decay times (~ 10 −3 − 10 −4 s at 4 K), sharply depending on temperature. The higher excited states of the centres apparently are the activator-oxygen hybrid states. Monovalent ns 2 ions possibly substitute Na + or K +ions in the K(Na)AlSi 3O 8 lattice. As follows from the lattice structure of alkali feldspars, they can have several different types of nearest neighbours.

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